Infineon Technologies HF double transistor array BFS 480 NPN Case type S BFS480 データシート
製品コード
BFS480
BFS480
1
Jun-27-2001
NPN Silicon RF Transistor
For low noise, low-power amplifiersin mobile
communication systems (pager, cordless
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
f
T
= 7 GHz
F = 1.5 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
Transistors in one package
VPS05604
6
3
1
5
4
2
EHA07196
6
5
4
3
2
1
C1
E2
B2
C2
E1
B1
TR1
TR2
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFS480
REs
1=B
2=E
3=C
4=B
5=E
6=C
SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
8
V
Collector-emitter voltage
V
CES
10
Collector-base voltage
V
CBO
10
Emitter-base voltage
V
EBO
2
Collector current
I
C
10
mA
Base current
I
B
1.2
Total power dissipation
T
S
112 °C
1)
P
tot
80
mW
Junction temperature
T
j
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
470
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance