Fairchild Semiconductor N/A BUT11AFTU データシート
製品コード
BUT11AFTU
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
BUT11F/11
A
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulsed: pulsed duration = 300
µ
s, duty cycle = 1.5%
Thermal Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BUT11F
: BUT11AF
: BUT11AF
850
1000
V
V
V
V
CEO
Collector-Emitter Voltage
: BUT11F
: BUT11AF
: BUT11AF
400
450
450
V
V
V
V
EBO
Emitter-Base Voltage
9
V
I
C
Collector Current (DC)
5
A
I
CP
*Collector Current (Pulse)
10
A
I
B
Base Current (DC)
2
A
I
BP
*Base Current (Pulse)
4
A
P
C
Collector Dissipation (T
C
=25
°
C)
40
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11AF
: BUT11AF
I
C
= 100mA, I
B
= 0
400
450
450
V
V
V
I
CES
Collector Cut-off Current
: BUT11F
: BUT11AF
: BUT11AF
V
CE
= 850V, V
BE
= 0
V
CE
= 1000V, V
BE
= 0
1
1
1
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
BE
= 9V, I
C
= 0
10
mA
V
CE
(sat)
Collector-Emitter Saturation Voltage
: BUT11F
: BUT11AF
: BUT11AF
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
1.5
1.5
1.5
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
: BUT11F
: BUT11AF
: BUT11AF
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
1.3
1.3
1.3
V
V
V
t
ON
Turn On Time
V
CC
= 250V, I
C
= 2.5A
I
B1
= -I
B2
= 0.5A
R
L
= 100
Ω
1
µ
s
t
STG
Storage Time
4
µ
s
t
F
Fall Time
0.8
µ
s
Symbol
Parameter
Typ
Max
Units
R
θ
jC
Thermal Resistance, Junction to Case
3.125
°
C/W
BUT11F/11AF
High Voltage Power Switching Applications
1
1.Base 2.Collector 3.Emitter
TO-220F