Fairchild Semiconductor N/A FSB749 データシート

製品コード
FSB749
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FSB749 — PNP Low Saturation T
ransistor
© 1999 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
FSB749 Rev. 1.1.0
January 2014
FSB749
PNP Low Saturation Transistor
 
Ordering Information
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
 = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or 
    low-duty cycle operations.
Part Number
Top Mark
Package
Packing Method
FSB749
749
SSOT 3L
Tape and Reel
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage
-25
V
V
CBO
Collector-Base Voltage
-35
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current - Continuous
-3
A
T
J, 
T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
B
E
C
    SuperSOT
TM
-3
Description
These devices are designed with high-current gain and
low saturation voltage with collector currents up to 3 A
continuous. Sourced from process PC.