Ixys IXGH32N120A3 IGBT 1200V IXGH32N120A3 データシート
製品コード
IXGH32N120A3
© 2011 IXYS CORPORATION, All rights Reserved
DS99608C(03/11)
IXGH32N120A3
IXGT32N120A3
GenX3
TM
1200V
IGBTs
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
up to 3 kHz Switching
Features
z
Optimized for Low Conduction Losses
z
International Standard Packages
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
Capacitor Discharge
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
z
Inrush Current Protection Circuits
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25°C to 150°C
1200
V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M
Ω
1200
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C
= 25°C
75
A
I
C110
T
C
= 110°C
32
A
I
CM
T
C
= 25°C, 1ms
230
A
I
A
T
C
= 25°C 20 A
E
AS
T
C
= 25°C 120 mJ
SSOA
V
GE
= 15V, T
J
= 125°C, R
G
= 20
Ω
I
CM
= 150
A
(RBSOA)
Clamped Inductive Load V
CE
≤≤≤≤≤ 0.8
•
V
CES
P
C
T
C
= 25°C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.063in) from Case for 10s 300
°C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight
TO-247 6.0 g
TO-268 4.0 g
TO-268 4.0 g
V
CES
= 1200V
I
C110
= 32A
V
CE(sat)
≤≤≤≤≤ 2.35V
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V
1200
V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0
5.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V
50 μA
T
J
= 125°C
1 mA
I
GES
V
CE
= 0V, V
GE
= ±20V
±100 nA
V
CE(sat)
I
C
= I
C110
,
V
GE
= 15V, Note 1 2.35 V
I
C
= 400A,
V
GE
= 30V, Note 1 11
V
G = Gate
C = Collector
E = Emitter
Tab = Collector
TO-247 (IXGH)
G
E
C (Tab)
C
TO-268 (IXGT)
E
G
C (Tab)