Elixir DDR2 UDIMM 1024MB M2Y1G64TU88D5B-AC ユーザーズマニュアル
製品コード
M2Y1G64TU88D5B-AC
M2Y1G64TU88D0B / M2Y2G64TU8HD0B / M2Y1G64TU88D4B / M2Y2G64TU8HD4B / M2Y1G64TU88D4B
M2Y1G64TU88D5B / M2Y2G64TU8HD5B / M2Y1G64TU88D6B / M2Y2G64TU8HD6B
M2Y1G64TU88D7B
M2Y1G64TU88D5B / M2Y2G64TU8HD5B / M2Y1G64TU88D6B / M2Y2G64TU8HD6B
M2Y1G64TU88D7B
1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR2 SDRAM DIMM
REV 1.2
12
10/2008
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Operating, Standby, and Refresh Currents
T
CASE
= 0 °C ~ 85 °C; V
DDQ
= V
DD
= 1.8V ± 0.1V (1GB, 1 Rank, 128Mx8 DDR2 SDRAMs)
Symbol
Parameter/Condition
PC2-5300
PC2-6400
Unit
I
DD0
Operating Current: one bank; active/precharge; T
rc
= T
rc (MIN);
T
ck
=
T
ck (MIN);
DQ, DM, and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle
880
1012
Ma
I
DD1
Operating Current: one bank; active/read/precharge; Burst = 2; T
rc
= T
rc (MIN);
CL=2.5; T
ck
= T
ck (MIN);
I
OUT
= 0Ma; address and control
inputs changing once per clock cycle
792
924
Ma
I
DD2P
Precharge Power-Down Standby Current: all banks idle;
power-down mode; CKE
power-down mode; CKE
V
IL (MAX);
T
ck
= T
ck (MIN)
88
88
Ma
I
DD2N
Idle Standby Current: CS
V
IH (MIN);
all banks idle; CKE
V
IH
(MIN)
; T
ck
= T
ck (MIN);
address and control inputs changing once per
clock cycle
572
660
Ma
I
DD2Q
Precharge Quiet Standby Current: All banks idle;
is HIGH; CKE
is HIGH; t
CK
= t
CK
(MIN)
; Other control and address inputs are stable,
Data bus inputs are floating.
440
484
Ma
I
DD3PF
Active Power-Down Current: All banks open; T
ck
= T
ck (MIN)
, CKE
is LOW; Other control and address inputs are STABLE, Data bus
inputs are floating. MRS A12 bit is set to low (Fast Power-down
Exit).
inputs are floating. MRS A12 bit is set to low (Fast Power-down
Exit).
246
264
Ma
I
DD3PS
Active Power-Down Current: All banks open; T
ck
= T
ck (MIN)
, CKE
is LOW; Other control and address inputs are STABLE, Data bus
inputs are floating. MRS A12 bit is set to high (Slow Power-down
Exit).
inputs are floating. MRS A12 bit is set to high (Slow Power-down
Exit).
97
97
Ma
I
DD3N
Active Standby Current: one bank; active/precharge; CS
V
IH
(MIN);
CKE
V
IH (MIN);
T
rc
= T
ras (MAX)
; T
ck
= T
ck (MIN)
; DQ, DM, and
DQS inputs changing twice per clock cycle; address and control
inputs changing once per clock cycle
inputs changing once per clock cycle
528
616
Ma
I
DD4W
Operating Current: one bank; Burst = 2; writes; continuous burst;
address and control inputs changing once per clock cycle; DQ and
DQS inputs changing twice per clock cycle; CL=2.5; T
address and control inputs changing once per clock cycle; DQ and
DQS inputs changing twice per clock cycle; CL=2.5; T
ck
= T
ck (MIN)
924
1056
Ma
I
DD4R
Operating Current: one bank; Burst = 2; reads; continuous burst;
address and control inputs changing once per clock cycle; DQ and
DQS outputs changing twice per clock cycle; CL = 2.5; T
address and control inputs changing once per clock cycle; DQ and
DQS outputs changing twice per clock cycle; CL = 2.5; T
ck
= T
ck
(MIN);
I
OUT
= 0Ma
1056
1188
Ma
I
DD5
Auto-Refresh Current: T
rc
= T
rfc (MIN)
1408
1540
Ma
I
DD6
Self-Refresh Current: CKE
0.2V
97
97
Ma
I
DD7
Operating Current: four bank; four bank interleaving with BL = 4,
address and control inputs randomly changing; 50% of data
changing at every transfer; T
address and control inputs randomly changing; 50% of data
changing at every transfer; T
rc
= T
rc
(min); I
OUT
= 0Ma.
1628
1804
Ma
Note: Module IDD was calculated from component IDD. It may differ from the actual measurement.