Panasonic UP0KG8D 사용자 설명서

Multi Chip Discrete 

Publication date: November 2005 

SJJ00334AED 

1

Silicon epitaxial planar type (SBD)

Silicon PNP epitaxial planar type (Tr)

For digital circuits



 Features



 Two elements incorporated into one package (SBD + Tr)



 Costs can be reduced through downsizing of the equipment and reduction of 

the number of parts



 Basic Part Number



 MA2SD24 + UNR31A3



 Absolute Maximum Ratings  T

a

 = 25°C

Parameter

Symbol

Rating

Unit

SBD

Reverse voltage

V

R

20

V

Repetitive peak reverse voltage

V

RRM

20

V

Forward current (Average)

I

F(AV)

200

mA

Peak forward current

I

FM

300

mA

Non-repetitive peak forward 
surge current

I

FSM

1

A

Tr

Collector-base voltage 
(Emitter open)

V

CBO

-

50

V

Collector-emitter voltage 
(Base open)

V

CEO

-

50

V

Collector current

I

C

-

80

mA

Overall

Total power dissipation

P

T

125

mW

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

–55 to +125

°

C

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Marking Symbol: 6K

Internal Connection

Unit: mm

1: Anode 

4: Collector

2: Base 

5: Cathode

3: Emitter 

    SSMini5-F2 Package

–0.02

+0.05

0.20

(0.30)

(0.50)

1

2

3

5

4

(0.50)

1.60

±0.05

0.55

±0.05

0 to 0.02

0.10 max

1.20

±0.05

1.00

±

0.05

1.60

±

0.05

0.10

±

0.02

(0.20)

(0.20)

5°

5°

Display at No.1 lead

3

4

1

2

5

Tr

SBD