Panasonic UP05C8PG 사용자 설명서
UP05C8PG
2
SJJ00401AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics T
a
= 25°C±3°C
Tr
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100 mA, I
E
= 0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 mA, I
C
= 0
3
V
Base-emitter voltage
V
BE
V
CE
= 10 V, I
C
= 2 mA
720
mV
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 2 mA
100
250
Transition frequency
*
f
T
V
CB
= 10 V, I
E
= -15 mA, f = 200 MHz
1 300
MHz
Power gain
G
P
V
CB
= 10 V, I
E
= -1 mA, f = 100 MHz
20
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement
CCD Load Device
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Pinchi off current
I
P
V
DS
= 8 V, V
G
= 0
5.0
7.0
mA
Output impedance
Z
O
V
DS
= V, V
G
= 0
0.02
MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P
T
T
a
Common characteristics chart
I
C
V
CE
I
C
I
B
I
C
V
BE
Characteristics charts of Tr
0
4
2
8
10
6
12
0
18
16
14
20
2
4
12
10
6
8
Collector current
I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
UP05C8PG_I
C
-V
CE
T
a
= 25°C
I
B
= 100 µA
60 µA
20µA
40µA
80 µA
0
0.4
0.6
0.2
0.8
1.0
0
40
30
35
45
5
20
25
15
10
Collector current
I
C
(
mA
)
Base current I
B
(mA)
UP05C8PG_I
C
-I
B
V
CE
= 6 V
0
0.4 0.6
0.2
1.2
0.8 1.0
1.4
0
40
50
10
20
30
Collector current
I
C
(
mA
)
Base-emitter voltage V
BE
(V)
UP05C8PG_I
C
-V
BE
V
CE
= 6 V
T
a
= 85°C
−
25°C
25°C
0
40
80
120
0
140
120
100
80
40
20
60
To
tal power dissipation
P
T
(
mW
)
Ambient temperature T
a
(°C)
UN05C8PG_P
T
-T
a