Panasonic 2SC5632G 사용자 설명서

Transistors

1

Publication date: June 2007

SJC00369AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon NPN epitaxial planar type

For high-frequency amplification and switching

■ Features

• High transition frequency f

T

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= 100 µA, I

E

 

=  0

15

V

Emitter-base cutoff current (Collector open)

I

EBO

V

EB

 

= 2 V, I

C

 

=  0

2

µA

Forward current transfer ratio

h

FE

V

CE

 

= 4 V, I

C

 

= 2 mA

100

350



h

FE

 ratio 

*

∆h

FE

h

FE2

: V

CE

 

= 4 V, I

C

 

= 100 µA

0.6

1.5



h

FE1

: V

CE

 

= 4 V, I

C

 

= 2 mA

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= 20 mA, I

B

 

= 4 mA

0.1

V

Transition frequency

f

T

V

CE

 

= 5 V, I

C

 

= 15 mA, f = 200 MHz

0.6

1.1

GHz

Collector output capacitance

C

ob

V

CB

 

= 10 V, I

E

 

= 0, f = 1 MHz

1.0

1.6

pF

(Common base, input open circuited)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

15

V

Collector-emitter voltage (Base open)

V

CEO

8

V

Emitter-base voltage (Collector open)

V

EBO

3

V

Collector current

I

C

50

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *:

∆h

FE

 

= h

FE2

 / h

FE1

■ Package

• Code

SMini3-F2

• Marking Symbol: 2R
• Pin Name

1: Base
2: Emitter
3: Collector