Panasonic 2SC3930G 사용자 설명서
Transistors
1
Publication date: April 2007
SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
µA
Forward current transfer ratio
*
h
FE
V
CB
= 10 V, I
E
= −1 mA
70
220
Transition frequency
f
T
V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz
150
250
MHz
Noise figure
NF
V
CB
= 10 V, I
E
= −1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
= 10 V, I
E
= −1 mA, f = 2 MHz
22
50
Ω
Reverse transfer capacitance
C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz
0.9
1.5
pF
(Common emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
B
C
h
FE
70 to 140
110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■ Package
• Code
SMini3-F2
• Marking Symbol: V
• Pin Name
• Pin Name
1. Base
2. Emitter
3. Collector
2. Emitter
3. Collector