Panasonic 2SC4805G 사용자 설명서
Transistors
1
Publication date: May 2007
SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 1 V, I
C
= 0
1
µA
Forward current transfer ratio
*
h
FE
V
CE
= 8 V, I
C
= 20 mA
50
300
Transition frequency
f
T
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7.0
8.5
GHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain
G
UM
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
10
dB
Noise figure
NF
V
CE
= 8 V, I
C
= 7 mA, f = 1.5 GHz
2.2
3.0
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
65
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
50 to 120
100 to 170
150 to 300
50 to 300
Marking symbol
3SQ
3SR
3SS
3S
Product of no-rank is not classified and have no indication for rank.
■ Package
• Code
SMini3-F2
• Marking Symbol: 3S
• Pin Name
• Pin Name
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector