Panasonic 2SD1328 사용자 설명서

Transistors

1

Publication date: February 2003

SJC00216BED

Silicon NPN epitaxial planar type

For low-voltage output amplification

For muting

For DC-DC converter

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Low ON resistance R

on

• High foward current transfer ratio h

FE

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

25

V

Collector-emitter voltage (Base open)

V

CEO

20

V

Emitter-base voltage (Collector open)

V

EBO

12

V

Collector current

I

C

0.5

A

Peak collector current

I

CP

1

A

Collector power dissipation

P

C

200

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= 10 µA, I

E

 

=  0

25

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= 1 mA, I

B

 

=  0

20

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= 10 µA, I

C

 

=  0

12

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= 25 V, I

E

 

= 0

100

nA

Forward current transfer ratio 

*1,2

h

FE

V

CE

 

= 2 V, I

C

 

= 0.5 A

200

800



Collector-emitter saturation voltage 

*1

V

CE(sat)

I

C

 

= 0.5 A, I

B

 

= 20 mA

0.13

0.40

V

Base-emitter saturation voltage 

*1

V

CE(sat)

I

C

 

= 0.5 A, I

B

 

= 50 mA

1.2

V

Transition frequency

f

T

V

CB

 

= 10 V, I

E

 

= −50 mA, f = 200 MHz

200

MHz

Collector output capacitance

C

ob

V

CB

 

= 10 V, I

E

 

= 0, f = 1 MHz

10

pF

ON resistance 

*3

R

ON

1.0

Ω

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Unit: mm

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

Marking Symbol: 1D

Rank

R

S

T

No-rank

h

FE

200 to 350

300 to 500

400 to 800

200 to 800

Marking symbol

1DR

1DS

1DT

1D

0.40

+0.10

–0.05

(0.65)

1.50

+0.25 –0.05

2.8

+0.2 –0.3

2

1

3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±

0.2

5˚

10˚

0 to 0.1

1.1

+0.2 –0.1

1.1

+0.3 –0.1

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

*3: R

on

 Measuremet circuit

V

V

1 k

Ω

R

on

 =        V

B

         × 1 000 (Ω)

 

    V

A

 

− V

B

f 

= 1 kHz

V 

= 0.3 V

V

B

I

B

 

= 1 mA

V

A

Product of no-rank is not classified and have no marking symbol for rank.

This product complies with the RoHS Directive (EU 2002/95/EC).