Panasonic 2SC4835G 사용자 설명서

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Transistors
1
Publication date: May 2007
SJC00368AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
21e
2
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings  T
a
 
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
 
= 10 µA, I
E
 
=  0
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
 
= 100 µA, I
B
 
=  0
10
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
 
= 10 V, I
E
 
=  0
1
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
 
= 2 V, I
C
 
=  0
1
µA
Forward current transfer ratio 
*1, 2
h
FE
V
CE
 
= 8 V, I
C
 
= 20 mA
50
200
Transition frequency
f
T
V
CE
 
= 8 V, I
C
 
= 15 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
C
ob
V
CB
 
= 10 V, I
E
 
= 0, f = 1 MHz
0.7
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
 
= 8 V, I
C
 
= 15 mA, f = 800 MHz
11
14
dB
Maximum unilateral power gain
G
UM
V
CE
 
= 8 V, I
C
 
= 15 mA, f = 800 MHz
15
dB
Noise figure
NF
V
CE
 
= 8 V, I
C
 
= 7 mA, f = 800 MHz
1.3
2.0
dB
■ Electrical Characteristics  T
a
 
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
50 to 100
80 to 130
100 to 200
■ Package
• Code
SMini3-F2
• Marking Symbol: 3M
• Pin Name
1: Base
2: Emitter
3: Collector