Philips BUK216-50YT 사용자 설명서

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Philips Semiconductors
Product specification
 TOPFET high side switch
BUK216-50YT 
 SMD version
 
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BG
Continuous off-state supply voltage
0
50
V
I
L
Continuous load current
T
mb 
 
140˚C
-
10
A
P
D
Total power dissipation
T
mb 
 
25˚C
-
98
W
T
stg
Storage temperature
-55
175
˚C
T
j
Continuous junction temperature
1
-
150
˚C
T
sold
Mounting base temperature
during soldering
-
260
˚C
Reverse battery voltages
2
-V
BG
Continuous reverse voltage
-
16
V
-V
BG
Peak reverse voltage
-
32
V
Application information
R
I
, R
S
External resistors
3
to limit input, status currents
3.2
-
k
Ω
Input and status
I
I
, I
S
Continuous currents
-5
5
mA
I
I
, I
S
Repetitive peak currents
δ
 
 0.1, tp = 300 
µ
s
-50
50
mA
Inductive load clamping
I
L
 = 15 A, V
BG
 = 16 V
E
BL
Non-repetitive clamping energy
T
j
 = 150 ˚C prior to turn-off
-
380
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
Ω
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
4
R
th j-mb
Junction to mounting base
-
-
1.0
1.27
K/W
For normal continuous operation.  A higher T
j
 is allowed as an overload condition but at the threshold T
j(TO)
 the over temperature trip operates
to protect the switch.
Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value.  The connected load must
limit the reverse load current.  The internal ground resistor limits the reverse battery ground current.  Power is dissipated and the T
j
rating must be observed.
To limit currents during reverse battery and transient overvoltages (positive or negative).
Of the output power MOS transistor.
March 2002
2
Rev 1.200