MemoRight 2.5" 128GB SATA SLC GT SSD MR25.2-128S 사용자 설명서

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MR25.2-128S
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MemoRight NAND Flash-based Solid State Drive 
MemoRight Confidential 
Page 15 
3/6/2009 
16 KBytes 
>3.2 
>2×10
8
 
write(100% cache 
miss) 
128 KBytes 
>25 
>2×10
8
 
In actual application environments, since this drive have a 32MByte cache and the cache strategy fine 
tuned for NAND flash, the write endurance will exceed this specification 
in
 almost all situation. 
3.11 Power specifications 
The drive receives DC power (+5V) through the interface connector. 
3.11.1 Power consumption 
Power requirement for the drive is listed in the table. Typical power measurements are based on an 
average of drive testing, under nominal conditions, using 5.0V input voltage at room temperature.   
z  Warm-up power 
Warm-up power is measured from the time of power-on to the time that the drive’s back up power 
system has stored enough energy.   
z  Read power 
The read power is measured with three 63 sectors read operations every 100msecs. 
The consecutive read power is measured with consecutive 128Kbytes read operations. 
z  Write power 
The write power is measured with three 63 sectors write operations every 100msecs. 
The consecutive write power is measured with consecutive 128Kbytes write operations. 
z  Idle mode power 
The idle power is measured with no read/wrote operation. 
z  Standby mode power 
During Standby mode, the drive accepts commands, and the DRAM cache is in sleep mode and the 
MCU is running in slower clock. 
Table 11:Power Consumption 
Power mode 
Power consumption(watts) (+5V, Room 
Temp) 
Warm-up 
3.75 
Read 
1.0 
Consecutive read 
2.0 
Write 
1.0 
Consecutive write 
2.0 
Idle 
1.0 
Standby 
1.0 
3.11.2 Conducted Noise 
Input noise ripple is measured at the host system power supply across an equivalent 25-ohm resistive 
loading on the +5 volt line. 
Using 5-volt power, the drive is expected to operate with a maximum of 100 mV peak-to-peak 
square-wave injected noise at up to 10 MHz. 
Note: Equivalent resistance is calculated by dividing the nominal voltage by the typical RMS read/write 
current.