MemoRight 2.5" 128GB SATA SLC GT SSD MR25.2-128S 사용자 설명서
제품 코드
MR25.2-128S
MemoRight NAND Flash-based Solid State Drive
MemoRight Confidential
Page 7
3/6/2009
1. General
Description
The NSSD (NAND Flash-based Solid State Drives) of MemoRight consists of semiconductor devices
completely, and the storage media is NAND Flash which has high reliability and high compatibility.
completely, and the storage media is NAND Flash which has high reliability and high compatibility.
As the NSSD doesn't have any mechanical part such as platter (disk), motor and suspension, it gives a
good solution in a UMPC and Tablet PC for a storage device with high performance and low power
consumption and small form factor.
good solution in a UMPC and Tablet PC for a storage device with high performance and low power
consumption and small form factor.
At the same time it gives rugged feature in industrial PC with an extreme environment and an
increased MTBF.
increased MTBF.
For an easy adoption, the NSSD has the same device interface and physical dimension with HDD.
1.1 Density
32GBytes, 64GBytes, 128GBytes
1.2 Form Factor
2.5" Type (100.20 x 69.85 x 9.50)mm
1.3 Host interface
PIO Mode 0 to 4
UDMA Mode 0 to 6
Serial ATA 1.0a specification
UDMA Mode 0 to 6
Serial ATA 1.0a specification
1.4 Performance
Host Interface: Max 150MB/s
Sustained Read transfer: Max 120MB/s (100MB/s for 128GB)
Sustained Write transfer: Max 120MB/s (100MB/s for 128GB)
Access time: < 0.1ms
Random IOPS Read @512Bytes: 10,000（9600 for 128GB）
Random IOPS Write@512Bytes: 600(500 for 128GB )
Sustained Read transfer: Max 120MB/s (100MB/s for 128GB)
Sustained Write transfer: Max 120MB/s (100MB/s for 128GB)
Access time: < 0.1ms
Random IOPS Read @512Bytes: 10,000（9600 for 128GB）
Random IOPS Write@512Bytes: 600(500 for 128GB )
1.5 Reliability
1.5.1 Wear
Leveling
This drive uses dynamic, static and active (initiative) balanced wear leveling strategy, which will ensure
that all blocks have nearly same wear level, and reduce the dependence of the write endurance on
access pattern.
that all blocks have nearly same wear level, and reduce the dependence of the write endurance on
access pattern.
1.5.2 Endurance
Write endurance: >10 years @ 1TByte/day (64GB type)
Read endurance: unlimited
1.5.3 ECC
This d
rive also implements an enhanced ECC algorithm, which reduces the error rate and enforces
the write endurance at same time. 4-bit error correction per sector(512 Bytes).
1.5.4 Bad block management algorithm
This drive has a certain number of reserved blocks. When a user data block fails, a reserved block will
replace the failed block. The replacement of bad block is transparent to user.
replace the failed block. The replacement of bad block is transparent to user.
1.5.5 MTBF(Mean Time between Failures)
More than 1,100,000 hours ( 32GB typical )
Calculation model: Telcordia SR-332 Issue 1 Method 1, Case 1