Panasonic MTM86627 사용자 설명서
MTM86627
SJF00085AED
4
This product complies with the RoHS Directive (EU 2002/95/EC).
P
D
T
a
I
D
V
DS
R
DS(on)
V
GS
R
DS(on)
I
D
C
X
V
DS
0
40
80
160
120
0
400
200
600
MTM86627_ P
D
-T
a
Drain power dissipation
P
D
(mW)
Ambient temperature T
a
(°C)
Single unit
Measuring on ceramic substrate at
40 mm × 38 mm × 0.8 mm
0
−
0.2 − 0.4
−
1.0
−
0.6 − 0.8
0
−
0.02
−
0.04
−
0.06
−
0.08
−
0.10
MTM86627_ I
D
-V
DS
Drain current
I
D
(A)
Drain-source voltage V
DS
(V)
−
1.1 V
−
1.0 V
−
0.9 V
−
0.8 V
V
GS
=
−
1.3 V
0
−
2
−
8
−
6
−
4
10
100
1 000
MTM86627_
R
DS(on)
-V
GS
Drain-source ON resistance
R
DS(on)
(
Ω
)
Gate-source voltage V
GS
(V)
I
D
=
−
1.0 A
0
−
0.5
−
1.0
−
1.5
−
2.0
10
−
2
10
−
1
1
MTM86627_
R
DS(on)
-
I
D
Drain-source ON resistance
R
DS(on)
(
Ω
)
Drain current I
D
(A)
V
GS
= 1.8 V
4.0 V
2.5 V
−
5
0
−
15
−
20
−
10
0
100
200
300
400
MTM86627_
C
X
-
V
DS
Drain-source voltage V
DS
(V)
Short-circuit input capacitance (Common source
)
C
iss
,
Short-circuit output capacitance (Common source
)
C
oss
,
Reverse transfer capacitance (Common source)
C
rss
(pF)
C
iss
C
oss
C
rss
Characteristics charts of FET
Characteristics charts of SBD
I
F
V
F
I
R
V
R
C
t
V
R
0
0.2
0.6
0.4
1
10
−
1
10
−
5
10
−
4
10
−
3
10
−
2
MTM86627_I
F
-V
F
Forward current
I
F
(
A
)
Forward voltage V
F
(V)
T
a
= 75°C
−
25°C
25°C
0
10
20
10
−
1
10
10
2
10
3
1
MTM86627_I
R
-V
R
Reverse current
I
R
(
µA
)
Reverse voltage V
R
(V)
T
a
= 75°C
−
25°C
25°C
0
20
10
0
40
20
60
80
100
MTM86627_C
t
-V
R
Te
rminal capacitance
C
t
(pF)
Reverse voltage V
R
(V)
f = 1 MHz
T
a
= 25°C