Philips BGD906MI 사용자 설명서
2001 Nov 01
2
Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler amplifier
BGD906; BGD906MI
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 900 MHz
frequency range.
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
PINNING - SOT115J
PIN
DESCRIPTION
BGD906
BGD906MI
1
input
output
2, 3
common
common
5
+V
B
+V
B
7, 8
common
common
9
output
input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
7
8
9
2
3
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
21.2
21.8
dB
f = 900 MHz
22
23
dB
I
tot
total current consumption (DC)
V
B
= 24 V; T
mb
= 35
°
C
405
435
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
supply voltage
−
30
V
V
i
RF input voltage
−
70
dBmV
T
stg
storage temperature
−
40
+100
°
C
T
mb
operating mounting base temperature
−
20
+100
°
C