Gemalto M2M GmbH ELS61-USA 사용자 설명서

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 ELS61-USA Hardware Interface Description
2.1 Application Interface
59
els61-usa_hid_v01.040a
2017-08-31
Confidential / Preliminary
Page 17 of 113
2.1.2
Signal Properties
Table 2:  
Signal properties
Function
Signal name
IO
Signal form and level
Comment
Power 
supply
BATT+
BB
BATT+
RF
I
WCDMA activated:
V
I
max = 4.5V
V
I
norm = 3.8V
V
I
min = 3.0V during Transmit active.
Imax = 900mA during Tx
LTE activated:
V
I
max = 4.5V
V
I
norm = 3.8V
V
I
min = 3.0V during Transmit active.
Lines of BATT+ and GND 
must be connected in 
parallel for supply pur-
poses because higher 
peak currents may occur.
Minimum voltage must 
not fall below 3.0V includ-
ing drop, ripple, spikes 
and not rise above 4.5V.
BATT+
BB
 and BATT+
RF
 
require an ultra low ESR 
capacitor:
BATT+
BB
 --> 150µF 
BATT+
RF
 --> 150µF 
If using Multilayer 
Ceramic Chip Capacitors 
(MLCC) please take DC-
bias into account. 
Note that minimum ESR 
value is advised at 
<70mΩ. 
Power 
supply
GND
Ground
Application Ground
External 
supply 
voltage 
V180
O
Normal operation:
V
O
norm = 1.80V ±3%
I
O
max = -10mA
SLEEP mode Operation:
V
O
Sleep = 1.80V ±5%
I
O
max = -10mA
CLmax = 100µF
V180 should be used to 
supply level shifters at 
the interfaces or to supply 
external application cir-
cuits.
VCORE and V180 may 
be used for the power 
indication circuit.
Vcore and V180 are 
sensitive against back-
powering by other sig-
nals. While switched off 
these voltage domains 
must have <0.2V.
If unused keep lines 
open.
VCORE
O
V
O
norm = 1.2V ±2.5%
I
O
max = -10mA
CLmax = 100nF
SLEEP mode Operation:
V
O
Sleep = 0.90V...1.2V ±4%
I
O
max = -10mA
Ignition
ON
1
I
V
IH
max = 5V tolerant
V
IH
min = 1.3V
V
IL
max = 0.5V
Slew rate < 1ms
ON ___|~~~~ 
This signal switches the 
module on, and is rising 
edge sensitive triggered.
Internal pull down value 
for this signal is 100kΩ.