Sequans Communications VZM2OQ 사용자 설명서
P
HYSICAL
C
HARACTERISTICS
I/O
C
C
HARACTERISTICS
• The Maximum values for I
ol
and I
oh
represent the maximal values for the
pad type. They are provided for information only.
Table 3-3: DC Characteristics for Digital IOs, Voltage 1.8 V - BIDIR and IN Types
VZM20Q
D
D
ATASHEET
12
P
ROPRIETARY
SEQUANS Communications
Paramete
r
Drive Strength
Min. Nom. Max.
Unit
V
IL
Input Low Voltage
0
0.54
V
V
IH
Input High Voltage
1.26
3.6
V
V
T
Threshold Point
0.79
0.87
0.94
V
V
T+
Schmitt Trigger Low to High Threshold Point
1
1.12
1.22
V
V
T-
Schmitt Trigger High to Low Threshold Point
0.61
0.71
0.8
V
V
T PU
Threshold Point with Pull-up Resistor Enabled
0.79
0.86
0.93
V
V
T PD
Threshold Point with Pull-down Resistor Enabled
0.8
0.87
0.95
V
V
T+ PU
Schmitt Trigger Low to High Threshold Point with Pull-up Resistor Enabled
1
1.12
1.21
V
V
T- PU
Schmitt Trigger High to Low Threshold Point with Pull-up Resistor Enabled
0.61
0.7
0.8
V
V
T+ PD
Schmitt Trigger Low to High Threshold Point with Pull-down Resistor Enabled
1.01
1.13
1.23
V
V
T- PD
Schmitt Trigger High to Low Threshold Point with Pull-down Resistor Enabled
0.62
0.72
0.81
V
I
I
Input Leakage Current @ VI=1.8V or 0V
±10
µA
I
OZ
Tri-state Output Leakage Current @ VO=1.8V or 0V
±10
µA
Input Capacitance
3
pF
R
PU
Pull-up Resistor
56
89
148
kOhm