Elpida 1GB DDR3 1600MHz EDJ1116EJBG 사용자 설명서

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EDJ1116EJBG
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Document. No. E1949E11 (Ver. 1.1)
Date Published September 2012 (K) Japan
Printed in Japan
URL:  http://www.elpida.com
©
Elpida Memory, Inc. 2012
PRELIMINARY DATA SHEET
COVER
Specifications
•  Density: 1G bits
•  Organization
—  16M words 
× 8 bits × 8 banks (EDJ1108EJBG)
—  8M words 
× 16 bits × 8 banks (EDJ1116EJBG)
•  Package
—  78-ball FBGA (EDJ1108EJBG)
—  96-ball FBGA (EDJ1116EJBG)
—  Lead-free (RoHS compliant) and Halogen-free
•  Power supply: 1.35V (typ)
—  VDD = 1.283V to 1.45V
—  Backward compatible for VDD, VDDQ 
= 1.5V 
± 0.075V
•  Data rate
—  1866Mbps/1600Mbps/1333Mbps (max)
•  1KB page size (EDJ1108EJBG)
—  Row address: A0 to A13
—  Column address: A0 to A9
•  2KB page size (EDJ1116EJBG)
—  Row address: A0 to A12
—  Column address: A0 to A9
•  Eight internal banks for concurrent operation
•  Burst length (BL): 8 and 4 with Burst Chop (BC)
•  Burst type (BT):
—  Sequential (8, 4 with BC)
—  Interleave (8, 4 with BC)
•  /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13
•  /CAS Write Latency (CWL): 5, 6, 7, 8, 9
•  Precharge: auto precharge option for each burst 
access
•  Driver strength: RZQ/7, RZQ/6 (RZQ = 240
Ω)
•  Refresh: auto-refresh, self-refresh
•  Refresh cycles
—  Average refresh period
7.8
µs at 0°C ≤ TC ≤ +85°C
3.9
µs at +85°C < TC ≤ +95°C
•  Operating case temperature range
—  TC = 0
°C to +95°C
Features
•  Double-data-rate architecture: two data transfers per 
clock cycle
•  The high-speed data transfer is realized by the 8 bits 
prefetch pipelined architecture
•  Bi-directional differential data strobe (DQS and /DQS) 
is transmitted/received with data for capturing data at 
the receiver
•  DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
•  Differential clock inputs (CK and /CK)
•  DLL aligns DQ and DQS transitions with CK transitions
•  Commands entered on each positive CK edge; data 
and data mask referenced to both edges of DQS
•  Data mask (DM) for write data
•  Posted /CAS by programmable additive latency for 
better command and data bus efficiency
•  On-Die Termination (ODT) for better signal quality
—  Synchronous ODT
—  Dynamic ODT
—  Asynchronous ODT
•  Multi Purpose Register (MPR) for pre-defined pattern 
read out
•  ZQ calibration for DQ drive and ODT
•  /RESET pin for Power-up sequence and reset function
•  SRT range:
—  Normal/extended
•  Programmable Output driver impedance control
•  Seamless BL4 access with bank-grouping 
—  Applied only for DDR3-1333 and 1600
1G bits DDR3L SDRAM
EDJ1108EJBG (128M words 
× 8 bits)
EDJ1116EJBG (64M words 
× 16 bits)