Texas Instruments IC FLPT TMS320C28346ZFET PBGA-256 TID TMS320C28346ZFET 데이터 시트
제품 코드
TMS320C28346ZFET
SPRS516D – MARCH 2009 – REVISED AUGUST 2012
6.2
Recommended Operating Conditions
MIN
NOM
MAX
UNIT
Device supply voltage, I/O, V
DDIO
3.14
3.3
3.46
V
300-MHz devices
1.14
1.2
1.26
V
Device supply voltage CPU, V
DD
200-MHz devices
1.05
1.1
1.16
V
Supply ground, V
SS
, V
SSIO
0
V
Oscillator supply ground, V
SSK
0
V
PLL/oscillator supply, V
DD18
1.71
1.8
1.89
V
Device clock frequency (system clock),
C28346/C28344/C28342
2
300
f
SYSCLKOUT
(V
DD
= 1.2 V ± 5%)
MHz
C28345/C28343/C28341
2
200
(V
DD
= 1.1 V ± 5%)
High-level input voltage, V
IH
(3.3 V)
2
V
DDIO
+ 0.3
V
High-level input voltage, V
IH
(1.8 V)
0.7 * V
DD18
V
Low-level input voltage, V
IL
(3.3 V)
V
SS
– 0.3
0.8
V
Low-level input voltage, V
IL
(1.8 V)
0.3 * V
DD18
V
High-level output source current,
All I/Os
–4
mA
V
OH
= 2.4 V, I
OH
Low-level output sink current,
All I/Os
4
mA
V
OL
= V
OL
MAX, I
OL
T version
–40
105
°C
S version
–40
125
°C
Junction temperature, T
J
(1)
Q version
–40
125
°C
(Q100 Qualification)
(1)
T
A
(Ambient temperature) is product- and application-dependent and can go up to the specified T
J
max of the device. See
Thermal Design Considerations.
6.3
Electrical Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
OH
= I
OH
MAX
2.4
V
OH
High-level output voltage
V
I
OH
= 50
μ
A
V
DDIO
– 0.2
V
OL
Low-level output voltage
I
OL
= I
OL
MAX
0.4
V
Pin with pullup
V
DDIO
= 3.3 V, V
IN
= 0 V
All I/Os (including XRS)
–190
–130
enabled
Input current
I
IL
μ
A
(low level)
Pin with pulldown
V
DDIO
= 3.3 V, V
IN
= 0 V
±15
enabled
Pin with pullup
V
DDIO
= 3.3 V, V
IN
= V
DDIO
±3
enabled
Input current
I
IH
μ
A
(high level)
Pin with pulldown
V
DDIO
= 3.3 V, V
IN
= V
DDIO
100
175
enabled
Output current, pullup or
I
OZ
V
O
= V
DDIO
or 0 V
±15
μ
A
pulldown disabled
C
I
Input capacitance
2
pF
108
Electrical Specifications
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