Texas Instruments IC FLPT TMS320C28346ZFET PBGA-256 TID TMS320C28346ZFET 데이터 시트
제품 코드
TMS320C28346ZFET
SPRS516D – MARCH 2009 – REVISED AUGUST 2012
6.11.3 High-Resolution PWM Timing
shows the high-resolution PWM switching characteristics.
Table 6-22. High-Resolution PWM Characteristics at SYSCLKOUT = (150–300 MHz)
MIN
TYP
MAX
UNIT
Micro Edge Positioning (MEP) step size
(1)
V
DD
= 1.2 V
55
120
ps
V
DD
= 1.1 V
65
140
ps
(1)
Maximum MEP step size is based on worst-case process, maximum temperature and maximum voltage. MEP step size will increase
with low voltage and high temperature and decrease with voltage and cold temperature.
Applications that use the HRPWM feature should use MEP Scale Factor Optimizer (SFO) estimation software functions. See the TI
software libraries for details of using SFO function in end applications. SFO functions help to estimate the number of MEP steps per
SYSCLKOUT period dynamically while the HRPWM is in operation.
with low voltage and high temperature and decrease with voltage and cold temperature.
Applications that use the HRPWM feature should use MEP Scale Factor Optimizer (SFO) estimation software functions. See the TI
software libraries for details of using SFO function in end applications. SFO functions help to estimate the number of MEP steps per
SYSCLKOUT period dynamically while the HRPWM is in operation.
6.11.4 Enhanced Capture (eCAP) Timing
shows the eCAP timing requirement and
shows the eCAP switching characteristics.
Table 6-23. Enhanced Capture (eCAP) Timing Requirement
(1)
TEST CONDITIONS
MIN
MAX
UNIT
t
w(CAP)
Capture input pulse width
Asynchronous
2t
c(SCO)
cycles
Synchronous
2t
c(SCO)
cycles
With input qualifier
1t
c(SCO)
+ t
w(IQSW)
cycles
(1)
For an explanation of the input qualifier parameters, see
Table 6-24. eCAP Switching Characteristics
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
t
w(APWM)
Pulse duration, APWMx output high/low
20
ns
Copyright © 2009–2012, Texas Instruments Incorporated
Electrical Specifications
129
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