Texas Instruments IC MCU 16B MSP430G2201IN14 PDIP-14 TID MSP430G2201IN14 데이터 시트
제품 코드
MSP430G2201IN14
MSP430G2x11
MSP430G2x01
MSP430G2x01
SLAS695I – FEBRUARY 2010 – REVISED FEBRUARY 2013
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V
CC
MIN
TYP
MAX
UNIT
V
CC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
f
FTG
Flash timing generator frequency
257
476
kHz
I
PGM
Supply current from V
CC
during program
2.2 V, 3.6 V
1
5
mA
I
ERASE
Supply current from V
CC
during erase
2.2 V, 3.6 V
1
7
mA
t
CPT
Cumulative program time
(1)
2.2 V, 3.6 V
10
ms
t
CMErase
Cumulative mass erase time
2.2 V, 3.6 V
20
ms
Program and erase endurance
10
4
10
5
cycles
t
Retention
Data retention duration
T
J
= 25°C
100
years
t
Word
Word or byte program time
(2)
30
t
FTG
t
Block, 0
Block program time for first byte or word
(2)
25
t
FTG
Block program time for each additional
t
Block, 1-63
18
t
FTG
byte or word
(2)
t
Block, End
Block program end-sequence wait time
(2)
6
t
FTG
t
Mass Erase
Mass erase time
(2)
10593
t
FTG
t
Seg Erase
Segment erase time
(2)
4819
t
FTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word write, byte write, and block write modes.
methods: individual word write, byte write, and block write modes.
(2)
These values are hardwired into the flash controller's state machine (t
FTG
= 1/f
FTG
).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
(RAMh)
RAM retention supply voltage
(1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage V
CC
when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Copyright © 2010–2013, Texas Instruments Incorporated
27