Texas Instruments Evaluation Module for Positive Voltage, Power-Limiting Hotswap Controller TPS24710EVM-003 TPS24710EVM-003 데이터 시트

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TPS24710EVM-003
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페이지 34
90%
t
(pff50-90)
Time
T0492-01
50%
0
V
GATE
V
EN
Time
T0494-01
50%
50%
I
GATE
V
VCC
t
(prr50-50)
0
SLVSAL2E – JANUARY 2011 – REVISED NOVEMBER 2013
ELECTRICAL CHARACTERISTICS (continued)
–40°C
≤ T
J
≤ 125°C, V
CC
= 12 V, V
EN
= 3 V, and R
PROG
= 50 k
Ω to GND.
All voltages referenced to GND, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
NOM
MAX
UNIT
V
TIMER
= 2 V
8
10
12
µA
Sinking current
V
EN
= 0 V, V
TIMER
= 2 V
2
4.5
7
mA
Upper threshold voltage
1.30
1.35
1.40
V
Lower threshold voltage
0.33
0.35
0.37
V
Timer activation voltage
Raise GATE until I
TIMER
sinking, measure V
(GATE – VCC)
, V
CC
= 12 V
5
5.9
7
V
Bleed-down resistance
V
ENSD
= 0 V, V
TIMER
= 2 V
70
104
130
k
Ω
OUT
Input bias current
V
OUT
= 12 V
16
30
µA
GATE
Output voltage
V
OUT
= 12 V
23.5
25.8
28
V
Clamp voltage
Inject 10 µA into GATE, measure V
(GATE – VCC)
12
13.9
15.5
V
Sourcing current
V
GATE
= 12 V
20
30
40
µA
Fast turnoff, V
GATE
= 14 V
0.5
1
1.4
A
Sinking current
Sustained, V
GATE
= 4 V to 23 V
6
11
20
mA
In inrush current limit, V
GATE
= 4 V to 23 V
20
30
40
µA
Pulldown resistance
Thermal shutdown
14
20
26
k
Ω
Fast-turnoff duration
8
13.5
18
µs
Turn on delay
V
CC
rising to GATE sourcing, t
prr50-50
, See
100
250
µs
SENSE
Input bias current
V
SENSE
= 12 V, sinking current
30
40
µA
Current limit threshold
V
OUT
= 12 V
22.5
25
27.5
mV
V
OUT
= 7 V, R
PROG
= 50 k
Ω
10
12.5
15
Power limit threshold
mV
V
OUT
= 2 V, R
PROG
= 25 k
Ω
10
12.5
15
Fast-trip threshold
52
60
68
mV
Fast-turnoff duration
8
13.5
18
µs
Fast-turnoff delay
(2)
V
(VCC – SENSE)
= 80 mV, C
GATE
= 0 pF, t
prf50–50
, See
200
ns
OTSD
Threshold, rising
130
140
°C
Hysteresis
(2)
10
°C
(2)
Parameters are for reference only, and do not constitute part of TI’s published specifications for purposes of TI’s product warranty.
Figure 1. t
pff50–90
Timing Definition
Figure 2. t
prr50–50
Timing Definition
4
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