Texas Instruments THS7316EVM Evaluation Module THS7316EVM THS7316EVM 데이터 시트
제품 코드
THS7316EVM
www.ti.com
ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATINGS
RECOMMENDED OPERATING CONDITIONS
SLOS521A – MARCH 2007 – REVISED JANUARY 2008
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION
PACKAGED DEVICES
PACKAGE TYPE
(1)
TRANSPORT MEDIA, QUANTITY
THS7316D
Rails, 75
SOIC-8
THS7316DR
Tape and Reel, 2500
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at
Web site at
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE
UNIT
Supply voltage, V
S+
to GND
5.5
V
V
I
Input voltage
–0.4 V to V
S+
V
I
O
Output current
±90
mA
Continuous power dissipation
See Dissipation Rating Table
T
J
Maximum junction temperature, any condition
(2)
150
°
C
T
J
Maximum junction temperature, continuous operation, long term reliability
(3)
125
°
C
T
stg
Storage temperature range
–65 to 150
°
C
HBM
2000
ESD ratings
CDM
1500
V
MM
200
(1)
Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
(2)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
temperature may result in reduced reliability and/or lifetime of the device.
POWER RATING
(1)
θ
JC
θ
JA
(T
J
= 125
°
C)
PACKAGE
(
°
C/W)
(
°
C/W)
T
A
= 25
°
C
T
A
= 85
°
C
SOIC-8 (D)
16.8
130
(2)
769 mW
308 mW
(1)
Power rating is determined with a junction temperature of 125
°
C. This is the point where performance starts to degrade and long-term
reliability starts to be reduced. Thermal management of the final PCB should strive to keep the junction temperature at or below 125
°
C
for best performance and reliability.
(2)
This data was taken with the JEDEC High-K test PCB. For the JEDEC low-K test PCB, the
θ
JA
is 196
°
C/W.
MIN
MAX
UNIT
V
S+
Supply voltage
3
5
V
T
A
Ambient temperature
–40
85
°
C
2
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