Texas Instruments BQ2022A Evaluation Module BQ2022AEVM-001 BQ2022AEVM-001 데이터 시트
제품 코드
BQ2022AEVM-001
www.ti.com
FUNCTIONAL DESCRIPTION
GENERAL OPERATION
1024-BIT EPROM
SLUS724C – SEPTEMBER 2006 – REVISED AUGUST 2007
AC SWITCHING CHARACTERISTCS (continued)
T
A
= –20
°
C to 70
°
C; V
PU(min)
= 2.65 V
DC
to 5.5 V
DC
, all voltages relative to VSS
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
t
PREC
Program recovery time
5
μ
s
t
PRE
Program rising-edge time
5
μ
s
t
PFE
Program falling-edge time
5
μ
s
t
RSTREC
480
μ
s
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
bq2022ADBZR
SDQ
1
I
Data
VSS
2, 3
-
Ground. Both pins should be connected to system ground.
bq2022ALPR
VSS
1
-
GND
SDQ
2
I
Data
No connection. This pin should be connected to system ground or
NC
3
-
left floating.
The block diagram on page 1 shows the relationships among the major control and memory sections of the
bq2022A. The bq2022A has three main data components: a 64-bit factory-programmed ROM, including 8-bit
family code, 48-bit identification number and 8-bit CRC value, 1024-bit EPROM, and EPROM STATUS bytes.
Power for read and write operations is derived from the DATA pin. An internal capacitor stores energy while the
signal line is high and releases energy during the low times of the DATA pin, until the pin returns high to
replenish the charge on the capacitor. A special manufacturer's PROGRAM PROFILE BYTE can be read to
determine the programming profile required to program the part.
bq2022A. The bq2022A has three main data components: a 64-bit factory-programmed ROM, including 8-bit
family code, 48-bit identification number and 8-bit CRC value, 1024-bit EPROM, and EPROM STATUS bytes.
Power for read and write operations is derived from the DATA pin. An internal capacitor stores energy while the
signal line is high and releases energy during the low times of the DATA pin, until the pin returns high to
replenish the charge on the capacitor. A special manufacturer's PROGRAM PROFILE BYTE can be read to
determine the programming profile required to program the part.
is a memory map of the 1024-bit EPROM section of the bq2022A, configured as four pages of 32 bytes
each. The 8-byte RAM buffers are additional registers used when programming the memory. Data are first
written to the RAM buffer and then verified by reading an 8-bit CRC from the bq2022A that confirms proper
receipt of the data. If the buffer contents are correct, a programming command is issued and an 8-byte segment
of data is written into the selected address in memory. This process ensures data integrity when programming
the memory. The details for reading and programming the 1024-bit EPROM portion of the bq2022A are in the
Memory Function Commands section of this data sheet.
written to the RAM buffer and then verified by reading an 8-bit CRC from the bq2022A that confirms proper
receipt of the data. If the buffer contents are correct, a programming command is issued and an 8-byte segment
of data is written into the selected address in memory. This process ensures data integrity when programming
the memory. The details for reading and programming the 1024-bit EPROM portion of the bq2022A are in the
Memory Function Commands section of this data sheet.
Table 1. 1024-Bit EPROM Data Memory Map
ADDRESS(HEX)
PAGE
0060-007F
Page 3
0040-005F
Page 2
0020-003F
Page 1
0000-001F
Page 0
Copyright © 2006–2007, Texas Instruments Incorporated
3
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