Texas Instruments THS770006 Evaluation Module THS770006EVM THS770006EVM 데이터 시트

SBOS520B

–

JULY 2010

–

REVISED JANUARY 2012

Test conditions are at T

A

= +25

°

C, V

S+

= +5V, V

OCM

= +2.5V, V

OUT

= 2V

PP

, R

L

= 400

Ω

differential, G = +6dB, differential input

and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as
discussed in

section.

Specified operating voltage

4.75

5

5.25

V

C

T

A

= +25

°

C

85

100

115

mA

A

Quiescent current

T

A

=

–

40

°

C to +85

°

C

80

125

mA

B

T

A

= +25

°

C, VCC

±

0.25V

60

90

dB

A

Power-supply rejection ratio

T

A

=

–

40

°

C to +85

°

C, VCC

±

0.5V

59

dB

B

Enable voltage threshold

Device powers on below 0.5V

0.5

V

A

Disable voltage threshold

Device powers down above 2.0V

2

V

A

Power-down quiescent current

0.8

3

mA

A

Input bias current

80

100

µ

A

A

Turn-on time delay

Time to V

OUT

= 90% of final value

10

µ

s

C

Turn-off time delay

Time to V

OUT

= 10% of original value

0.15

µ

s

C

Specified operating range

–

40

+85

°

C

C

Thermal resistance,

θ

JC

(3)

Junction to case (bottom)

8.9

°

C/W

C

Thermal resistance,

θ

JA

(3)

Junction to ambient

44.1

°

C/W

C

(3)

Tested using JEDEC High-K test PCB. Thermal management of the final printed circuit board (PCB) should keep the junction
temperature below +125

°

C for long term reliability.

Copyright

©

2010

–

2012, Texas Instruments Incorporated

5

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