Texas Instruments LM5019 Isolated Bias Supply Evaluation Board LM5019ISOEVAL/NOPB LM5019ISOEVAL/NOPB 데이터 시트
제품 코드
LM5019ISOEVAL/NOPB
SNVS788E – JANUARY 2012 – REVISED DECEMBER 2013
Absolute Maximum Ratings
(1) (2)
V
IN
, UVLO to RTN
–0.3 V to 100 V
SW to RTN
–1.5 V to V
IN
+0.3 V
SW to RTN (100ns transient)
–5 V to VIN +0.3 V
BST to V
CC
100 V
BST to SW
13 V
R
ON
to RTN
–0.3 V to 100 V
V
CC
to RTN
–0.3 V to 13 V
FB to RTN
–0.3 V to 5 V
ESD Rating (Human Body Model
(3)
2 kV
Lead Temperature
(4)
200°C
Storage Temperature Range
–55°C to +150°C
Maximum Junction Temperature
150°C
(1)
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For verified specifications and test conditions, see
operation of the device is intended to be functional. For verified specifications and test conditions, see
. The
RTN pin is the GND reference electrically connected to the substrate.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
specifications.
(3)
The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin.
(4)
For detailed information on soldering plastic Power PAD package, refer
. Max solder time not to exceed 4 seconds.
Recommended Operating Conditions
(1)
V
IN
Voltage
7.5 V to 100 V
Operating Junction Temperature
−40°C to +125°C
(1)
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For verified specifications and test conditions, see
operation of the device is intended to be functional. For verified specifications and test conditions, see
. The
RTN pin is the GND reference electrically connected to the substrate.
Thermal Characteristics
WSON-8
SO PowerPAD-8
UNIT
θ
JA
Junction-to-ambient thermal resistance
41.3
41.1
°C/W
θ
JCbot
Junction-to-case (bottom) thermal resistance
3.2
2.4
°C/W
Ψ
JB
Junction-to-board thermal characteristic parameter
19.2
24.4
°C/W
θ
JB
Junction-to-board thermal resistance
19.1
30.6
°C/W
θ
JCtop
Junction-to-case (top) thermal resistance
34.7
37.3
°C/W
Ψ
JT
Junction-to-top thermal characteristic parameter
0.3
6.7
°C/W
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3
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