Texas Instruments CC2650DK 사용자 설명서
Factory Configuration (FCFG)
9.2.1.27 FLASH_E_P Register (Offset = 170h) [reset = 17331A33h]
FLASH_E_P is shown in
and described in
Flash Erase and Program Setup Time
Figure 9-48. FLASH_E_P Register
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
PSU
ESU
PVSU
EVSU
R-17h
R-33h
R-1Ah
R-33h
Table 9-50. FLASH_E_P Register Field Descriptions
Bit
Field
Type
Reset
Description
31-24
PSU
R
17h
Program setup time in cycles. Value will be written to
FLASH:FSM_PE_OSU.PGM_OSU by the flash device driver when
an erase/program operation is initiated.
FLASH:FSM_PE_OSU.PGM_OSU by the flash device driver when
an erase/program operation is initiated.
23-16
ESU
R
33h
Erase setup time in cycles. Value will be written to
FLASH:FSM_PE_OSU.ERA_OSU by the flash device driver when
an erase/program operation is initiated.
FLASH:FSM_PE_OSU.ERA_OSU by the flash device driver when
an erase/program operation is initiated.
15-8
PVSU
R
1Ah
Program verify setup time in cycles. Value will be written to
FLASH:FSM_PE_VSU.PGM_VSU by the flash device driver when
an erase/program operation is initiated.
FLASH:FSM_PE_VSU.PGM_VSU by the flash device driver when
an erase/program operation is initiated.
7-0
EVSU
R
33h
Erase verify setup time in cycles. Value will be written to
FLASH:FSM_PE_VSU.ERA_VSU by the flash device driver when an
erase/program operation is initiated.
FLASH:FSM_PE_VSU.ERA_VSU by the flash device driver when an
erase/program operation is initiated.
742
Device Configuration
SWCU117A – February 2015 – Revised March 2015
Copyright © 2015, Texas Instruments Incorporated