Texas Instruments 12 Channel Gamma Buffer with Dual Memory Banks BUF12840EVM BUF12840EVM 데이터 시트

SBOS519A

–

OCTOBER 2010

–

REVISED JULY 2011

Boldface limits apply over the specified temperature range, T

–

°

°

At T

A

= +25

°

C, V

S

= +18V, and V

SD

= +5V, unless otherwise noted.

Reset value

Code 0

0

V

Continuous output current

See note

(1)

30

mA

Output accuracy

Code 512

±

20

±

50

mV

±

μ

°

Integral nonlinearity

INL

V

OUT

= GND + 0.3V to V

S

–

0.3V

0.3

Bits

Differential nonlinearity

DNL

V

OUT

= GND + 0.3V to V

S

–

0.3V

0.3

Bits

Load regulation, 10mA

REG

Code 512 or V

CC

/2, I

OUT

= +5mA to

–

5mA step

0.5

1.5

mV/mA

Operating range

9

20

V

Total analog supply current

I

S

Outputs at midscale with no load

6.5

10

mA

Logic 1 input voltage

V

IH

0.7

×

V

SD

V

Logic 0 input voltage

V

IL

0.3

×

V

SD

V

Logic 0 output voltage

V

OL

I

SINK

= 3mA

0.15

0.4

V

Input leakage

±

0.01

±

10

μ

A

EEPROM read clock speed

Master mode

71

87

100

kHz

BANK switching delay

LD pin = 0, V

OUT

= 50% of code 1023

7

10

μ

s

Operating range

V

SD

2.0

5.5

V

Digital supply current

(1)

I

SD

Two-Wire bus inactive

90

150

μ

A

μ

Power-on reset

POR

1.1

1.5

1.7

V

Specified range

–

40

+95

°

C

Operating range

Junction temperature

<

+125

°

C

–

40

+95

°

C

Storage range

–

65

+150

°

C

(1)

Observe maximum power dissipation. Exposed thermal die is soldered to the PCB using thermal vias. Refer to Texas Instruments
application report

.

(2)

Refers to pins EA0, EA1, EN, LD, SCL, SDA, A0, and BKSEL.

Copyright

©

2010

–

2011, Texas Instruments Incorporated

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