Texas Instruments AM18x evaluation module with Wi-Fi TMDXEVMWIFI1808L TMDXEVMWIFI1808L 데이터 시트
제품 코드
TMDXEVMWIFI1808L
SPRS653E – FEBRUARY 2010 – REVISED MARCH 2014
5
Specifications
5.1
Absolute Maximum Ratings Over Operating Junction Temperature Range
(Unless Otherwise Noted)
(1)
Core Logic, Variable and Fixed
-0.5 V to 1.4 V
(CVDD, RVDD, RTC_CVDD, PLL0_VDDA , PLL1_VDDA ,
SATA_VDD, USB_CVDD )
SATA_VDD, USB_CVDD )
(2)
I/O, 1.8V
-0.5 V to 2 V
Supply voltage ranges
(USB0_VDDA18, USB1_VDDA18, SATA_VDDR, DDR_DVDD18)
(2)
I/O, 3.3V
-0.5 V to 3.8V
(DVDD3318_A, DVDD3318_B, DVDD3318_C, USB0_VDDA33,
USB1_VDDA33)
USB1_VDDA33)
(2)
Oscillator inputs (OSCIN, RTC_XI), 1.2V
-0.3 V to CVDD + 0.3V
Dual-voltage LVCMOS inputs, 3.3V or 1.8V (Steady State)
-0.3V to DVDD + 0.3V
Dual-voltage LVCMOS inputs, operated as 3.3V
DVDD + 20%
(Transient Overshoot/Undershoot)
up to 20% of Signal
Period
Input voltage (V
I
) ranges
Dual-voltage LVCMOS inputs, operated as 1.8V
DVDD + 30%
(Transient Overshoot/Undershoot)
up to 30% of Signal
Period
USB 5V Tolerant IOs:
5.25V
(3)
(USB0_DM, USB0_DP, USB0_ID, USB1_DM, USB1_DP)
USB0 VBUS Pin
5.50V
(3)
Dual-voltage LVCMOS outputs, 3.3V or 1.8V
-0.3 V to DVDD + 0.3V
(Steady State)
Dual-voltage LVCMOS outputs, operated as 3.3V
DVDD + 20%
(Transient Overshoot/Undershoot)
up to 20% of Signal
Output voltage (V
O
) ranges
Period
Dual-voltage LVCMOS outputs, operated as 1.8V
DVDD + 30%
(Transient Overshoot/Undershoot)
up to 30% of Signal
Period
Input or Output Voltages 0.3V above or below their respective power
±20mA
Clamp Current
rails. Limit clamp current that flows through the I/O's internal diode
protection cells.
protection cells.
Operating Junction Temperature ranges,
Commercial (default)
0°C to 90°C
T
J
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to VSS, USB0_VSSA33, USB0_VSSA, PLL0_VSSA, OSCVSS, RTC_VSS
(3)
Up to a maximum of 24 hours.
5.2
Handling Ratings
MIN
MAX
UNIT
Storage temperature range, T
stg
(default)
-55
150
°C
Human Body Model (HBM)
(2)
>1
>1
kV
ESD Stress Voltage, V
ESD
(1)
Charged Device Model (CDM)
(3)
>500
>500
V
(1)
Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.
(2)
Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001-2010. JEDEC document JEP 155 states that 500V HBM allows
safe manufacturing with a standard ESD control process, and manufacturing with less than 500V HBM is possible if necessary
precautions are taken. Pins listed as 1000V may actually have higher performance.
safe manufacturing with a standard ESD control process, and manufacturing with less than 500V HBM is possible if necessary
precautions are taken. Pins listed as 1000V may actually have higher performance.
(3)
Level listed above is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP 157 states that 250V CDM allows safe
manufacturing with a standard ESD control process. Pins listed as 250V may actually have higher performance.
manufacturing with a standard ESD control process. Pins listed as 250V may actually have higher performance.
64
Specifications
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