Atmel Xplained Evaluation Board AT32UC3A3-XPLD AT32UC3A3-XPLD 데이터 시트
제품 코드
AT32UC3A3-XPLD
998
32072H–AVR32–10/2012
AT32UC3A3
Fix/Workaround
None.
None.
SSC
Frame Synchro and Frame Synchro Data are delayed by one clock cycle
The frame synchro and the frame synchro data are delayed from 1 SSC_CLOCK when:
- Clock is CKDIV
- The START is selected on either a frame synchro edge or a level
- Frame synchro data is enabled
- Transmit clock is gated on output (through CKO field)
Fix/Workaround
Transmit or receive CLOCK must not be gated (by the mean of CKO field) when START
condition is performed on a generated frame synchro.
The frame synchro and the frame synchro data are delayed from 1 SSC_CLOCK when:
- Clock is CKDIV
- The START is selected on either a frame synchro edge or a level
- Frame synchro data is enabled
- Transmit clock is gated on output (through CKO field)
Fix/Workaround
Transmit or receive CLOCK must not be gated (by the mean of CKO field) when START
condition is performed on a generated frame synchro.
39.1.8
FLASHC
Corrupted read in flash may happen after fuses write or erase operations (FLASHC
LP, UP, WGPB, EGPB, SSB, PGPFB, EAGPF commands)
After a flash fuse write or erase operation (FLASHC LP, UP, WGPB, EGPB, SSB, PGPFB,
EAGPF commands), reading (data read or code fetch) in flash may fail. This may lead to an
exception or to other errors derived from this corrupted read access.
Fix/Workaround
Before the flash fuse write or erase operation, enable the flash high speed mode (FLASHC
HSEN command). The flash fuse write or erase operations (FLASHC LP, UP, WGPB,
EGPB, SSB, PGPFB, EAGPF commands) must be issued from RAM or through the EBI.
After these commands, read 3 times one flash page initialized to 00h. Disable the flash high
speed mode (FLASHC HSDIS command). It is then possible to safely read or code fetch the
flash.
LP, UP, WGPB, EGPB, SSB, PGPFB, EAGPF commands)
After a flash fuse write or erase operation (FLASHC LP, UP, WGPB, EGPB, SSB, PGPFB,
EAGPF commands), reading (data read or code fetch) in flash may fail. This may lead to an
exception or to other errors derived from this corrupted read access.
Fix/Workaround
Before the flash fuse write or erase operation, enable the flash high speed mode (FLASHC
HSEN command). The flash fuse write or erase operations (FLASHC LP, UP, WGPB,
EGPB, SSB, PGPFB, EAGPF commands) must be issued from RAM or through the EBI.
After these commands, read 3 times one flash page initialized to 00h. Disable the flash high
speed mode (FLASHC HSDIS command). It is then possible to safely read or code fetch the
flash.
39.2
Rev. E
39.2.1
General
Devices cannot operate with CPU frequency higher than 66MHz in 1WS and 36MHz in
0WS
Fix/Workaround
None
0WS
Fix/Workaround
None
Increased Power Consumption in VDDIO in sleep modes
If the OSC0 is enabled in crystal mode when entering a sleep mode where the OSC0 is dis-
abled, this will lead to an increased power consumption in VDDIO.
Fix/Workaround
Disable the OSC0 through the System Control Interface (SCIF) before going to any sleep
mode where the OSC0 is disabled, or pull down or up XIN0 and XOUT0 with 1 Mohm
resistor.
If the OSC0 is enabled in crystal mode when entering a sleep mode where the OSC0 is dis-
abled, this will lead to an increased power consumption in VDDIO.
Fix/Workaround
Disable the OSC0 through the System Control Interface (SCIF) before going to any sleep
mode where the OSC0 is disabled, or pull down or up XIN0 and XOUT0 with 1 Mohm
resistor.
Power consumption in static mode The power consumption in static mode can be up
to 330µA on some parts (typical at 25°C)
Fix/Workaround
Set to 1b bit CORRS4 of the ECCHRS mode register (MD). In C-code: *((volatile int*)
(0xFFFE2404))= 0x400.
to 330µA on some parts (typical at 25°C)
Fix/Workaround
Set to 1b bit CORRS4 of the ECCHRS mode register (MD). In C-code: *((volatile int*)
(0xFFFE2404))= 0x400.