On Semiconductor NCL30082 Evaluation Board NCL30082FLYGEVB NCL30082FLYGEVB 데이터 시트
제품 코드
NCL30082FLYGEVB
NCL30082
http://onsemi.com
5
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise noted: For typical values T
J
= 25°C, V
CC
= 12 V;
For min/max values T
J
= −40°C to +125°C, Max T
J
= 150°C, V
CC
= 12 V)
Description
Test Condition
Symbol
Min
Typ
Max
Unit
STARTUP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Hysteresis V
Minimum Operating Voltage
Hysteresis V
CC(on)
– V
CC(off)
Internal logic reset
V
CC
increasing
V
CC
decreasing
V
CC
decreasing
V
CC(on)
V
CC(off)
V
CC(HYS)
V
CC(reset)
16
8.2
8
3.5
18
8.8
–
4.5
20
9.4
–
5.5
V
Over Voltage Protection
VCC OVP threshold
V
CC(OVP)
26
28
30
V
V
CC(off)
noise filter
V
CC(reset)
noise filter−
t
VCC(off)
t
VCC(reset)
–
–
–
5
20
–
–
–
ms
Startup current
I
CC(start)
–
13
30
mA
Startup current in fault mode
I
CC(sFault)
–
46
60
mA
Supply Current
Device Disabled/Fault
Device Enabled/No output load on pin 5
Device Switching (F
Device Enabled/No output load on pin 5
Device Switching (F
sw
= 65 kHz)
V
CC
> V
CC(off)
F
sw
= 65 kHz
C
DRV
= 470 pF,
F
sw
= 65 kHz
I
CC1
I
CC2
I
CC3
0.8
–
–
–
1.2
2.3
2.7
2.3
2.7
1.4
4.0
5.0
4.0
5.0
mA
CURRENT SENSE
Maximum Internal current limit
V
ILIM
0.95
1
1.05
V
Leading Edge Blanking Duration for V
ILIM
(T
j
= −25°C to 125°C)
t
LEB
250
300
350
ns
Leading Edge Blanking Duration for V
ILIM
(T
j
= −40°C to 125°C)
t
LEB
240
300
350
ns
Input Bias Current
DRV high
I
bias
–
0.02
–
mA
Propagation delay from current detection to gate off−state
t
ILIM
–
50
150
ns
Threshold for immediate fault protection activation
V
CS(stop)
1.35
1.5
1.65
V
Leading Edge Blanking Duration for V
CS(stop)
t
BCS
–
120
–
ns
Blanking time for CS to GND short detection V
pinVIN
= 1 V
t
CS(blank1)
6
–
12
ms
Blanking time for CS to GND short detection V
pinVIN
= 3.3 V
t
CS(blank2)
2
–
4
ms
GATE DRIVE
Drive Resistance
DRV Sink
DRV Source
R
SNK
R
SRC
–
–
13
30
–
–
W
Drive current capability
I
SNK
I
SRC
–
–
500
300
–
–
mA
Rise Time (10% to 90%)
C
DRV
= 470 pF
t
r
–
40
–
ns
Fall Time (90% to 10%)
C
DRV
= 470 pF
t
f
–
30
–
ns
DRV Low Voltage
V
CC
= V
CC(off)
+0.2 V
C
DRV
= 470 pF,
R
DRV
= 33 kW
V
DRV(low)
8
–
–
V
DRV High Voltage
V
CC
= 30 V
C
DRV
= 470 pF,
R
DRV
= 33 kW
V
DRV(high)
10
12
14
V
4. Guaranteed by design
5. OTP triggers when R
NTC
= 4.7 kW