Infineon Technologies N/A BCW 67 B PNP Case type SOT 23 I(C) BCW67B 데이터 시트
제품 코드
BCW67B
2011-09-15
3
BCW67, BCW68
Electrical Characteristics
at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BCW67
I
C
= 10 mA, I
B
= 0 , BCW68
V
(BR)CEO
32
45
45
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0 , BCW67
I
C
= 10 µA, I
E
= 0 , BCW68
V
(BR)CBO
45
60
60
-
-
-
-
-
-
Emitter-base breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
V
CB
= 32 V, I
E
= 0
V
CB
= 45 V, I
E
= 0
V
CB
= 32 V, I
E
= 0 , T
A
= 150 °C; BCW67
V
CB
= 45 V, I
E
= 0 , T
A
= 150 °C; BCW68
I
CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.02
0.02
0.02
20
20
20
µA
Emitter-base cutoff current
V
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
20
nA
DC current gain
1)
I
C
= 100 µA, V
CE
= 10 V, h
FE
-grp.A/F
I
C
= 100 µA, V
CE
= 10 V, h
FE
-grp.B/G
I
C
= 100 µA, V
CE
= 10 V, h
FE
-grp.C/H
I
C
= 10 mA, V
CE
= 1 V, h
FE
-grp.A/F
I
C
= 10 mA, V
CE
= 1 V, h
FE
-grp.B/G
I
C
= 10 mA, V
CE
= 1 V, h
FE
-grp.C/H
I
C
= 100 mA, V
CE
= 1 V, h
FE
-grp.A/F
I
C
= 100 mA, V
CE
= 1 V, h
FE
-grp.B/G
I
C
= 100 mA, V
CE
= 1 V, h
FE
-grp.C/H
I
C
= 500 mA, V
CE
= 2 V, h
FE
-grp.A/F
I
C
= 500 mA, V
CE
= 2 V, h
FE
-grp.B/G
I
C
= 500 mA, V
CE
= 2 V, h
FE
-grp.C/H
h
FE
35
50
80
75
50
80
75
120
180
100
160
250
180
100
160
250
35
60
60
100
-
-
-
-
-
-
-
-
-
-
-
160
250
350
250
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
400
630
400
630
-
-
-
-
-
-