Fairchild Semiconductor N/A MMBT4403 데이터 시트
제품 코드
MMBT4403
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.0
3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
5. Pulse test: pulse width
≤ 300 μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
Voltage
(5)
I
C
= -1.0 mA, I
B
= 0
-40
V
V
(BR)CBO
Collector-Base Breakdown
Voltage
Voltage
I
C
= -0.1 mA, I
E
= 0
-40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -0.1 A, I
C
= 0
-5.0
V
I
BL
Base Cut-Off Current
V
CE
= -35 V, V
EB
= -0.4 V
-0.1
μA
I
CEX
Collector Cut-Off Current
V
CE
= -35 V, V
EB
= -0.4 V
-0.1
μA
On Characteristics
h
FE
DC Current Gain
I
C
= -0.1 mA, V
CE
= -1.0 V
30
I
C
= -1.0 mA, V
CE
= -1.0 V
60
I
C
= -10 mA, V
CE
= -1.0 V
100
I
C
= -150 mA, V
CE
= -2.0 V
(5)
100
300
I
C
= -500 mA, V
CE
= -2.0 V
(5)
20
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
(5)
I
C
= -150 mA, I
B
= -15 mA
-0.40
V
I
C
= -500 mA, I
B
= -50 mA
-0.75
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA
(5)
-0.75
-0.95
V
I
C
= -500 mA, I
B
= -50 mA
-1.30
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product
I
C
= -20 mA, V
CE
= -10 V,
f = 100 MHz
200
MHz
C
cb
Collector-Base Capacitance
V
CB
= -10 V, I
E
= 0,
f = 140 kHz
8.5
pF
C
eb
Emitter-Base Capacitance
V
BE
= -0.5 V, I
C
= 0,
f = 140 kHz
30
pF
h
ie
Input Impedance
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
1.5
15.0
k
Ω
h
re
Voltage Feedback Ratio
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
0.1
8.0
x10
-4
h
fe
Small-Signal Current Gain
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
60
500
h
oe
Output Admittance
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
1
100
μmhos
Switching Characteristics
t
d
Delay Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= -15 mA
15
ns
t
r
Rise Time
20
ns
t
s
Storage Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= I
B2
= -15 mA
225
ns
t
f
Fall Time
30
ns