Fairchild Semiconductor N/A MMBT4401 데이터 시트
제품 코드
MMBT4401
3
2N4401 / MMBT4401
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1 mA, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1 mA, I
C
= 0
6.0
V
I
BL
Base Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
µ
A
I
CEX
Collector Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
µ
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 2.0 V
20
40
80
40
80
100
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
0.75
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.75
0.95
1.2
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
250
MHz
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
6.5
pF
C
eb
Emitter-Base Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
30
pF
h
ie
Input Impedance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0
15
k
Ω
h
re
Voltage Feedback Ratio
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
0.1
8.0
x 10
-4
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
40
500
h
oe
Output Admittance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0
30
µ
mhos
SWITCHING CHARACTERISTICS
t
d
Delay Time V
CC
= 30 V, V
EB
= 2 V, 15 ns
t
r
Rise Time
I
C
= 150 mA, I
B1
= 15 mA
20
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA
225
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
30
ns
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Test Conditions
Min
Max
Units
NPN General Purpose Amplifier
(continued)