Fairchild Semiconductor N/A MPSA29 데이터 시트
제품 코드
MPSA29
MPSA29
NPN Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CES
Collector-Emitter Breakdown Voltage*
I
C
= 100
µ
A, I
B
= 0
100
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
100
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
12
V
I
CBO
Collector Cutoff Current
V
CB
= 80 V, I
E
= 0
100
nA
I
CES
Collector Cutoff Current
V
CE
= 80 V, I
E
= 0
500
nA
I
EBO
Emitter Cutoff Current
V
EB
= 10 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 10 mA
V
CE
= 5.0 V, I
C
= 100 mA
10,000
10,000
10,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 0.01 mA
I
C
= 100 mA, I
B
= 0.1 mA
1.2
1.5
1.5
V
V
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
125
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
8.0
pF
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%