Fairchild Semiconductor N/A MMBT2369A 데이터 시트

This device is designed for high speed saturated switching at collector
currents of 10 mA to 100 mA.  Sourced from Process 21.

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

V

CEO

Collector-Emitter Voltage

15

V

V

CBO

Collector-Base Voltage

40

V

V

EBO

Emitter-Base Voltage

4.5

V

I

C

Collector Current - Continuous

200

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

Thermal Characteristics      

TA = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

350

2.8

225

1.8

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

125

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

357

556

°

C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 

1997 Fairchild Semiconductor Corporation