Fairchild Semiconductor N/A FFB2227A 데이터 시트

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FFB2227A
다운로드
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F
F
B2227
A / FMB2227A — NPN & PN
P General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
FFB2227A / FMB2227A Rev. 1.1.0
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
 = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150
°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed 
    or low-duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
(2)
Values are at T
A
 = 25°C unless otherwise noted.
Note:
2. PCB board size: FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current - Continuous
500
mA
T
J, 
T
STG
 
Operating and Storage Junction Temperature Range
- 55 to +150
°C
Symbol
Parameter
Maximum
Units
FFB2227A
FMB2227A
P
D
Total Device Dissipation
300
700
mV
Derate Above 25
°C
2.4
5.6
mV/
°C
R
θJA
Thermal Resistance, Junction to Ambient
415
180
°C/W