Fairchild Semiconductor N/A BSR 15 PNP Case type SOT 23 I(C) BSR15 데이터 시트
제품 코드
BSR15
©2002 Fairchild Semiconductor Corporation
Rev. B1, July 2002
BSR15
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
* Device mounted on FR-4 PCB 40mm
×
40mm
×
1.5mm
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
= 0
-40
V
BV
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -100
µ
A, I
E
= 0
-60
V
BV
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -10
µ
A, I
C
= 0
-5.0
V
I
CBO
Collector Cut-off Current
V
CB
= -50V
V
CB
= -50V, T
A
= 150
°
C
-20
-20
-20
nA
µ
A
I
CEX
Collector Cut-off Current
V
CE
= -30V, V
EB
= -0.5V
-50
nA
I
BEX
Reverse Base Current
V
CE
= -30V, V
EB
= -3.0V
-50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= -0.1mA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
35
50
75
50
75
100
30
300
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.4
-1.6
-1.6
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-1.3
-2.6
-2.6
V
V
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= -50mA, V
CE
= -20V,
f = 100MHz, T
A
= 25
°
C
200
MHz
C
cb
Output Capacitance
V
CB
= -10V, I
E
= 0, f = 1.0MHz
8.0
pF
C
eb
Emitter-Base Capacitance
V
CB
= -2.0V, I
E
= 0, f = 1.0MHz
30
pF
Switching Characteristics
t
on
Turn-On Time
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
45
ns
t
d
Delay Time
10
ns
t
r
Rise Time
40
ns
t
off
Turn-Off Time
V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
100
ns
t
s
Storage Time
80
ns
t
f
Fall Time
30
ns
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
Derate above 25
°
C
350
2.8
mW
mW/
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
357
°
C/W