Fairchild Semiconductor N/A NZT660A 데이터 시트
제품 코드
NZT660A
NZT660 / NZT660A — PNP Low
Saturation T
ransistor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
NZT660 / NZT660A Rev. 1.1.0
3
Typical Performance Characteristics
Figure 1. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base-Emitter On Voltage
vs. Collector Current
Figure 3. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Input / Output Capacitance
vs. Reverse Bias Voltage
Figure 5. Current Gain vs. Collector Current
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-B
AS
E
-E
M
ITTE
R
SA
TUR
A
T
IO
N
V
O
L
TA
G
E(
V)
C
B
ESA
T
25°C
- 40°C
125°C
β = 10
0.0001
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V
-
B
A
SE
-E
M
IT
T
E
R
O
N
V
O
LT
AG
E (
V
)
C
BE
O
N
25°C
- 40°C
125°C
V = 2.0V
ce
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLEC
TO
R-
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
- 40°C
25°C
125°C
β = 10
0.1
0.5
1
10
20
50
100
0
50
100
150
200
250
300
350
400
V - COLLECTOR VOLTAGE (V)
CA
P
A
C
IT
A
N
C
E
(
p
f)
CE
V = 2.0V
ce
C
ibo
C
obo
f = 1.0MHz
0.0001
0.001
0.01
0.1
1
10
0
100
200
300
400
500
600
700
800
900
1000
I - COLLECTOR CURRENT (mA)
H
- CU
RRE
NT
G
A
IN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce