Ixys IXGH30N60C3D1 IGBT 600V IXGH30N60C3D1 데이터 시트
제품 코드
IXGH30N60C3D1
© 2011 IXYS CORPORATION, All Rights Reserved
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.3
0.4
0.5
0.6
0.7
0.8
4
6
8
10
12
14
16
18
20
R
G
- Ohms
E
of
f
-
M
illiJ
ou
le
s
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
on
-
M
illiJ
ou
illiJ
ou
le
s
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25
35
45
55
65
75
85
95
105
115
125
T
J
- Degrees Centigrade
t
f i
-
N
a
n
o
se
co
n
d
s
20
30
40
50
60
70
80
90
t
d
(of
f)
-
N
a
n
o
se
co
n
d
s
t
fi
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 300V
I
C
= 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
4
6
8
10
12
14
16
18
20
R
G
- Ohms
t
f
i
-
Na
no
se
co
nd
s
40
60
80
100
120
140
t
d
(of
f)
-
Na
no
no
se
co
nd
s
t
fi
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
35
40
I
C
- Amperes
E
of
f
-
M
illiJ
ou
le
s
0
0.2
0.4
0.6
0.8
1
1.2
E
on
-
M
illiJ
ou
illiJ
ou
le
s
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25
35
45
55
65
75
85
95
105
115
125
T
J
- Degrees Centigrade
E
of
f
-
M
illiJ
ou
le
s
0
0.2
0.4
0.6
0.8
1
1.2
1.4
E
on
-
M
illiJ
ou
illiJ
ou
le
s
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
10
15
20
25
30
35
40
I
C
- Amperes
t
f
i
-
Na
no
se
co
nd
s
20
30
40
50
60
70
80
90
100
110
t
d
(of
f)
- Na
no
se
co
nd
s
t
fi
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC