Panasonic 2SA2009G 사용자 설명서
Transistors
1
Publication date: April 2007
SJC00349AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2009G
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• S-Mini type package, allowing downsizing and thinning of the
• S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−120
V
Collector-emitter voltage (Base open)
V
CEO
−120
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−20
mA
Peak collector current
I
CP
−50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−120
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −1 mA, I
B
= 0
−120
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −50 V, I
E
= 0
−100
nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −50 V, I
B
= 0
−1
µA
Forward current transfer ratio
*
h
FE
V
CE
=
−5 V, I
C
=
−2 mA
180
700
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −20 mA, I
B
= −2 mA
− 0.6
V
Transition frequency
f
T
V
CB
= −5 V, I
E
= 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
V
CE
=
−40 V, I
C
=
−1 mA, G
V
= 80 dB
130
mV
R
g
= 100 k
Ω, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
■ Package
• Code
SMini3-F2
• Marking Symbol: AR
• Pin Name
• Pin Name
1. Base
2. Emitter
3. Collector
2. Emitter
3. Collector