Intel Xeon 5080 HH80555KH1094M Ficha De Dados
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HH80555KH1094M
Dual-Core Intel® Xeon® Processor 5000 Series Datasheet
81
Thermal Specifications
.
Notes:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
2.
Same as I
FW
in the diode model in
3.
Characterized across a temperature range of 50-80°C.
4.
Not 100% tested. Specified by design characterization.
5.
The ideality factor, n
Q
, represents the deviation from ideal transistor model behavior as exemplified by the
equation for the collector current: I
C
= I
S
* (e
qVBE/n
Q
kT
- 1)
Where I
S
= saturation current, q = electronic charge, V
BE
= voltage across the transistor based emitter
junction (same nodes as V
D
), k = Boltzmann Constant, and T = absolute temperature (Kelvin).
6.
The series resistance, R
T
provided in
can be used for more accurate readings as needed.
Notes:
1.
See the Dual-Core Intel
®
Xeon
®
Processor 5000 Series Thermal/Mechanical Design Guidelines for more
information on how to use the Tdiode_Offset, Tdiode_Base and n
trim
parameters for fan speed control.
§
Table 6-10. Thermal Diode Interface
Land Name
Land Number
Description
THERMDA
AL1
diode anode
THERMDC
AK1
diode cathode
THERMDA2
AJ7
diode anode
THERMDC2
AH7
diode cathode
Table 6-11. Thermal Diode Parameters using Transistor Model
Symbol
Parameter
Min
Typ
Max
Unit
Notes
I
FW
Forward Bias Current
5
-
200
µA
1, 2
I
E
Emitter Current
5
-
200
µA
n
Q
Transistor Ideality
0.997
1.001
1.005
-
3, 4, 5
Beta
-
0.391
-
0.760
-
3, 4
R
T
Series Resistance
2.79
4.52
6.24
Ω
3, 6
Table 6-12. Parameters for Tdiode Correction Factor
Symbol
Parameter
Typ
Unit
Notes
n
trim
Diode Ideality used to calculate
Tdiode_Offset
1.008
1
Tdiode_Base
0
°C
1