Cypress CY62137EV30 Manual Do Utilizador
CY62137EV30
MoBL
®
Document #: 38-05443 Rev. *B
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ............................. –0.3V to 3.9V (V
Potential ............................. –0.3V to 3.9V (V
CC(MAX)
+ 0.3V)
DC Voltage Applied to Outputs
in High-Z State
in High-Z State
[4, 5]
............... –0.3V to 3.9V (V
CC MAX
+ 0.3V)
DC Input Voltage
[4, 5]
........... –0.3V to 3.9V (V
CC MAX
+ 0.3V)
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
[6]
CY62137EV30-45LL Industrial –40°C to +85°C 2.2V to 3.6V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns
Unit
Min.
Typ.
[7]
Max.
V
OH
Output HIGH Voltage I
OH
= –0.1 mA
V
CC
= 2.20V
2.0
V
I
OH
= –1.0 mA
V
CC
= 2.70V
2.4
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
V
CC
= 2.20V
0.4
V
I
OL
= 2.1mA
V
CC
= 2.70V
0.4
V
V
IH
Input HIGH Voltage
V
CC
= 2.2V to 2.7V
1.8
V
CC
+ 0.3
V
V
CC
= 2.7V to 3.6V
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
V
CC
= 2.2V to 2.7V
–0.3
0.6
V
V
CC
= 2.7V to 3.6V
–0.3
0.8
V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1
+1
µA
I
OZ
Output Leakage
Current
Current
GND < V
O
< V
CC
, Output Disabled
–1
+1
µA
I
CC
V
CC
Operating Supply
Current
f = f
MAX
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
15
20
mA
f = 1 MHz
2.0
2.5
I
SB1
Automatic CE
Power-down Current
— CMOS
Inputs
Power-down Current
— CMOS
Inputs
CE
1
> V
CC
–
0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE and WE), V
CC
= 3.60V
1
7
µA
I
SB2
Automatic CE
Power-down Current
— CMOS Inputs
Power-down Current
— CMOS Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
1
7
µA
Notes:
4. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
=V
CC
+0.75V for pulse durations less than 20ns.
6. Full Device AC operation assumes a 100
µs ramp time from 0 to Vcc(min) and 200 µs wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.