Epson S1C33L03 Manual Do Utilizador

(Unless otherwise specified: V

DDE

=V

DD

=2V±0.2V, V

SS

=0V, Ta=-40°C to +85°C)

∗

Static current consumption

I

DDS

Static state, T

j

=85°C

–

–

80

µA

Input leakage current

I

LI

-1

–

1

µA

Off-state leakage current

I

OZ

-1

–

1

µA

High-level output voltage

V

OH

I

OH

=-0.6mA (Type1), I

OH

=-2mA (Type2),

I

OH

=-4mA (Type3), V

DD

=Min.

V

DD

-0.2

–

–

V

Low-level output voltage

V

OL

I

OL

=0.6mA (Type1), I

OL

=2mA (Type2),

I

OL

=4mA (Type3), V

DD

=Min.

–

–

0.2

V

High-level input voltage

V

IH

CMOS level, V

DD

=Max.

1.6

–

–

V

Low-level input voltage

V

IL

CMOS level, V

DD

=Min.

–

–

0.3

V

Positive trigger input voltage

V

T+

CMOS Schmitt

0.4

–

1.6

V

Negative trigger input voltage

V

T-

CMOS Schmitt

0.3

–

1.4

V

Hysteresis voltage

V

H

CMOS Schmitt

0

–

–

V

Pull-up resistor

R

PU

V

I

=0V

Other than DSIO

120

480

1200

k

Ω

DSIO

60

240

600

k

Ω

Pull-down resistor

R

PD

V

I

=V

DD

 (ICEMD)

60

240

600

k

Ω

Input pin capacitance

C

I

f=1MHz, V

DD

=0V

–

–

10

pF

Output pin capacitance

C

O

f=1MHz, V

DD

=0V

–

–

10

pF

I/O pin capacitance

C

IO

f=1MHz, V

DD

=0V

–

–

10

pF

Note: See  Appendix B for pin characteristics.