Texas Instruments TPS92310-12 Evaluation Module TPS92310-12FB/NOPB TPS92310-12FB/NOPB Ficha De Dados
Códigos do produto
TPS92310-12FB/NOPB
SNVS792 – FEBRUARY 2012
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
VCC to GND
-0.3V to 40V
DLY, COMP, ZCD to GND
-0.3V to 7V
ISNS to GND
-0.3V to 7V
GATE to GND
-0.3V to 12V (5ns, –5V)
MODE1 to GND
-0.3V to 7V
MODE2 to GND
-0.3V to 7V
ESD Rating, HBM
(3)
±2 kV
Machine Model
200V
Storage Temperature Range
-65°C to +125°C
Junction Temperature
+150°C
(1)
Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is intended to be functional, but device parameter specifications may not be ensured. For ensured specifications and test
conditions, see the Electrical Characteristics. All voltages are with respect to the potential at the GND pin, unless otherwise specified.
device is intended to be functional, but device parameter specifications may not be ensured. For ensured specifications and test
conditions, see the Electrical Characteristics. All voltages are with respect to the potential at the GND pin, unless otherwise specified.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
specifications.
(3)
Human Body Model, applicable std. JESD22-A114-C.
Operating Conditions
Supply Voltage range VCC
13V to 36V
Junction Temperature (T
J
)
-40°C to +125°C
Thermal Resistance (
θ
JA
)
(1)
120°C/W
(1)
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design. In applications where high power dissipation
and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient
temperature (T
dissipation exists, special care must be paid to thermal dissipation issues in board design. In applications where high power dissipation
and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient
temperature (T
A-MAX
) is dependent on the maximum operating junction temperature (T
J-MAX-OP
= 125°C), the maximum power dissipation
of the device in the application (P
D-MAX
), and the junction-to ambient thermal resistance of the part/package in the application (R
θ
JA
), as
given by the following equation: T
A-MAX
= T
J-MAX-OP
– (R
θ
JA
× P
D-MAX
).
Electrical Characteristics
V
CC
= 18V unless otherwise indicated. Typicals and limits appearing in plain type apply for T
A
= T
J
= +25°C. Limits appearing
in boldface type apply over the full Operating Temperature Range. Data sheet minimum and maximum specification limits
are specified by design, test or statistical analysis.
are specified by design, test or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY VOLTAGE INPUT (VCC)
V
CC-UVLO
VCC Turn on threshold
23.4 / 23
25.6
27.8 / 29
V
VCCTurn off threshold
11.1 / 10.4
13
14.7 / 15.7
V
Hysteresis
12.6
I
STARTUP
Startup Current
V
CC=
V
CC-UVLO
–3.0V
10
12.5
14.75
µA
I
VCC
Operating supply current
Not switching
0.9
1.2
1.5
mA
65kHz switching, C
LOAD
= 1nF
2
mA
ZERO CROSS DETECT (ZCD)
I
ZCD
ZCD bias current
V
ZCD
= 5V
0.1
1
µA
V
ZCD-OVP
ZCD over-voltage
4.1
4.3
4.5
V
threshold
T
OVP
Over voltage de-bounce
3
cycle
time
V
ZCD-ARM
ZCD Arming threshold
V
ZCD
= Increasing
1.16
1.24
1.3
V
V
ZCD-TRIG
ZCD Trigger threshold
V
ZCD
= Decreasing
0.48
0.6
0.77
V
V
ZCD-HYS
ZCD Hysteresis
V
ZCD-ARM
-V
ZCD-TRIG
0.64
V
Copyright © 2012, Texas Instruments Incorporated
3
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