Freescale Semiconductor TWR-K70F120M High-Performance MCUs with Graphics LCD, Connectivity and Security TWR-K70F120M-KIT TWR-K70F120M-KIT Guia De Informação

64-512KB

64-144pin

K20 Family 32KB-1MB

32-144pin

K10 Family 32KB-1MB

32-144pin

64-512KB

64-144pin

Low power

Mixed signal

USB

Segment LCD

Ethernet

K50 Family 128-512KB

64-144pin

K60 Family 256KB-1MB 100-256pin

K70 Family 512KB-1MB 196-256pin

Encryption and Tamper Detect

DDR

Operational &

transimpedance

amplifiers

Graphic LCD

All Kinetis families include a powerful array of analog, communication and timing and control peripherals with the level of
feature integration increasing with flash memory size and the number of inputs/outputs. Features common to all Kinetis
families include:

• Core:

• ARM Cortex-M4 Core delivering 1.25 DMIPS/MHz with DSP instructions (floating-point unit available on

certain Kinetis families)

• Up to 32-channel DMA for peripheral and memory servicing with minimal CPU intervention
• Broad range of performance levels rated at maximum CPU frequencies of 50 MHz, 72 MHz, 100 MHz, 120

MHz, and 150 MHz

• Ultra-low power:

• 10 low power operating modes for optimizing peripheral activity and wake-up times for extended battery life.
• Low–leakage wake-up unit, low power timer, and low power RTC for additional low power flexibility
• Industry-leading fast wake-up times

• Memory:

• Scalable memory footprints from 32 KB flash / 8 KB RAM to 1 MB flash / 128 KB RAM. Independent flash

banks enable concurrent code execution and firmware updates

• Optional 16 KB cache memory for optimizing bus bandwidth and flash execution performance. Offered on K10,

K20, and K60 family devices with CPU performance of up to 150 MHz.

• FlexMemory with up to 512 KB FlexNVM and up to 16 KB FlexRAM. FlexNVM can be partitioned to support

additional program flash memory (ex. bootloader), data flash (ex. storage for large tables), or EEPROM backup.
FlexRAM supports EEPROM byte-write/byte-erase operations and dictates the maximum EEPROM size.

• EEPROM endurance capable of exceeding 10 million cycles
• EEPROM erase/write times an order of magnitude faster than traditional EEPROM

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Freescale Semiconductor, Inc.