Freescale Semiconductor Evaluation Kit (EVK) for the i.MX51 Applications Processor MCIMX51EXP MCIMX51EXP Ficha De Dados

42

Freescale Semiconductor

 

AC electrical characteristics in DDR mobile for Fast mode and ovdd=1.65 – 1.95 V, ipp_hve=0 are placed 
in 

.

1

Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo, 
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V, 
IO 1.95 V, –40 °C and s0-s5 = 000000.

2

Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.

3

Hysteresis mode is recommended for input with transition time greater than 25 ns.

Output Pad Transition Times (High Drive)

1

tpr

15pF
35pF

1.35/1.31
2.99/2.94

1.02/1.03
2.28/2.29

0.89/0.89
1.85/1.94

ns

Output Pad Transition Times (Medium Drive)

1

tpr

15pF
35pF

2.00/1.99
4.55/4.44

1.56/1.53
3.38/3.45

1.28/1.32
2.79/2.85

ns

Output Pad Transition Times (Low Drive)

1

tpr

15pF
35pF

4.08/3.92
8.93/8.95

3.11/3.06
6.84/6.81

2.50/2.61
5.56/5.76

ns

Output Pad Propagation Delay (High Drive)

1

tpo

15pF
35pF

1.54/1.52
2.69/2.75

1.73/1.62
2.59/2.55

2.36/2.09
3.04/2.86

ns

Output Pad Propagation Delay (Medium Drive)

1

tpo

15pF
35pF

2.00/2.02
3.75/3.86

2.08/2.00
3.38/3.39

2.64/2.40
3.65/3.56

ns

Output Pad Propagation Delay (Low Drive)

1

tpo

15pF
35pF

3.43/3.52
6.92/7.20

3.13/3.13
5.72/5.94

3.47/3.34
5.49/5.65

ns

Output Pad Slew Rate (High Drive)

1

tps

15pF
35pF

0.87/0.89
0.39/0.40

1.06/1.05
0.47/0.47

1.11/1.11
0.54/0.51

V/ns

Output Pad Slew Rate (Medium Drive)

1

tps

15pF
35pF

0.58/0.59
0.26/0.26

0.69/0.71
0.32/0.31

0.77/0.75
0.35/0.35

V/ns

Output Pad Slew Rate (Low Drive)

1

tps

15pF
35pF

0.29/0.30
0.13/0.13

0.35/0.35
0.16/0.16

0.40/0.38
0.18/0.17

V/ns

Output Pad di/dt (High Drive)

1

di/dt

—

185

 91

46

mA/ns

Output Pad di/dt (Medium drive)

1

di/dt

—

124

61

31

mA/ns

Output Pad di/dt (Low drive)

1

di/dt

—

62

30

16

mA/ns

Input Pad Transition Times

2

trfi

1.2 pF

0.09/0.09

0.132/0.128

0.212/0.213

ns

Input Pad Propagation Delay without Hysteresis 
(CMOS input), 50%-50%

2

tpi

1.2 pF

0.45/0.93

0.6/0.58

0.9/0.88

ns

Input Pad Propagation Delay with Hysteresis 
(CMOS input), 50%-50%

2

tpi

1.2 pF

0.55/0.55

0.71/0.7

1.03/0.98

ns

Input Pad Propagation Delay (DDR input), 
50%-50%

2

tpi

1.2 pF

0.38/0.38

0.58/0.61

1.014/1.07

—

Maximum Input Transition Times

3

trm

—

—

—

5

ns