Atmel ATmega328P Xplained Mini MEGA328P-XMINI MEGA328P-XMINI Ficha De Dados
Códigos do produto
MEGA328P-XMINI
289
ATmega48A/PA/88A/PA/168A/PA/328/P [DATASHEET]
Atmel-8271H-AVR- ATmega-Datasheet_08/2014
If the rise time of the V
CC
is unable to fulfill the requirements listed above, the following alternative algorithm can
be used.
to “0000”, RESET pin to 0V and V
CC
to 0V.
2.
Apply 4.5 - 5.5V between V
CC
and GND.
3.
Monitor V
CC
, and as soon as V
CC
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
4.
Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been applied to ensure
the Prog_enable Signature has been latched.
the Prog_enable Signature has been latched.
5.
Wait until V
CC
actually reaches 4.5 -5.5V before giving any parallel programming commands.
6.
Exit Programming mode by power the device down or by bringing RESET pin to 0V.
28.7.2 Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient programming,
the following should be considered.
the following should be considered.
The command needs only be loaded once when writing or reading multiple memory locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the EESAVE Fuse is
programmed) and Flash after a Chip Erase.
programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word window in Flash
or 256 byte EEPROM. This consideration also applies to Signature bytes reading.
or 256 byte EEPROM. This consideration also applies to Signature bytes reading.
28.7.3 Chip Erase
The Chip Erase will erase the Flash and EEPROM
memories plus Lock bits. The Lock bits are not reset until
the program memory has been completely erased. The Fuse bits are not changed. A Chip Erase must be
performed before the Flash and/or EEPROM are reprogrammed.
performed before the Flash and/or EEPROM are reprogrammed.
Note:
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2.
Set BS1 to “0”.
3.
Set DATA to “1000 0000”. This is the command for Chip Erase.
4.
Give XTAL1 a positive pulse. This loads the command.
5.
Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6.
Wait until RDY/BSY goes high before loading a new command.
28.7.4 Programming the Flash
The Flash is organized in pages, see
. When programming the Flash, the program
data is latched into a page buffer. This allows one page of program data to be programmed simultaneously. The
following procedure describes how to program the entire Flash memory:
following procedure describes how to program the entire Flash memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2.
Set BS1 to “0”.
3.
Set DATA to “0001 0000”. This is the command for Write Flash.
4.
Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
1. Set XA1, XA0 to “00”. This enables address loading.
2.
Set BS1 to “0”. This selects low address.
3.
Set DATA = Address low byte (0x00 - 0xFF).